Optoelectronic Devices And Applications Thereof

ABSTRACT

In one aspect, optoelectronic devices are described herein. In some embodiments, an optoelectronic device described herein comprises a first electrode, a second electrode and a light emitting composite layer disposed between the first electrode and the second electrode. A dielectric layer, in some embodiments, is disposed between the light emitting composite layer and the first electrode and/or second electrode.

RELATED APPLICATION DATA

The present application claims priority pursuant to 35 U.S.C. §119(e) toU.S. Provisional Patent Application 61/506,855, filed Jul. 12, 2011 andU.S. Provisional Patent Application 61/591,721, filed Jan. 27, 2012,each of which are hereby incorporated by reference in its entirety.

STATEMENT OF GOVERNMENT LICENSE RIGHTS

This invention was made through the support of the Department ofDefense—United States Air Force Office of Scientific Research (AFOSR)Grant No. FA9550-04-1-0161. The Federal Government retains certainlicense rights in this invention.

FIELD

The present invention is related to optoelectronic devices and, inparticular, to light emitting optoelectronic devices.

BACKGROUND

Organic thin films have been heavily investigated in recent years due totheir application in optoelectronic devices such as organic lightemitting devices (OLEDs), photovoltaic devices and organicphotodetectors.

Optoelectronic devices based on organic materials, including organicthin films, are becoming increasingly desirable in a wide variety ofapplications for a number of reasons. For example, materials used toconstruct organic optoelectronic devices are relatively inexpensive incomparison to their inorganic counterparts, thereby providing costadvantages over optoelectronic devices produced with inorganicmaterials. Moreover, organic materials provide desirable physicalproperties such as flexibility, permitting their use in applicationsunsuitable for rigid inorganic materials.

Current devices based on light emitting organic materials, however, haveseveral disadvantages that limit their application in certain fields.Some light emitting polymers, for example, have breakdown voltages atrelatively low fields, limiting the charge injection and lifetime ofsome devices. In addition, some organic materials and device structuresrequire complex and/or expensive fabrication methods to obtainsufficiently thin films of emitting material for lighting applications.

SUMMARY

In one aspect, optoelectronic devices are described herein. In someembodiments, an optoelectronic device described herein comprises a firstelectrode, a second electrode and a light emitting composite layerdisposed between the first electrode and the second electrode. In someembodiments, the first electrode and/or second electrode is radiationtransmissive. As described further herein, the light emitting compositelayer can demonstrate a variety of constructions.

In some embodiments, an electrically insulating or dielectric layer ispositioned between the light emitting composite layer and firstelectrode. A dielectric layer, in some embodiments, is positionedbetween the light emitting composite layer and the second electrode. Insome embodiments, a first dielectric layer is positioned between thefirst electrode and the light emitting composite layer, and a seconddielectric layer is deposited between the second electrode and the lightemitting composite layer. In some embodiments, when one or moredielectric layers are positioned between the light emitting compositelayer and first electrode and/or second electrode, the optoelectronicdevice is a field induced polymer electroluminescent device (FIPEL).Alternatively, in some embodiments wherein a dielectric layer is notdisposed between the light emitting composite layer and first and/orsecond electrodes, the optoelectronic device is an organic lightemitting diode (OLED).

In another aspect, an optoelectronic device described herein comprises afirst electrode, a second electrode and a light emitting composite layerdisposed between the first electrode and the second electrode, the lightemitting composite layer comprising a luminescent phase disposed in adielectric or electrically insulating host. In some embodiments, theluminescent phase comprises a conjugated polymer, a semiconductingpolymer, small molecules or nanoparticles or mixtures thereof.Additionally, in some embodiments, a dielectric layer is positionedbetween the light emitting composite layer and first and/or secondelectrode. The first and/or second electrode can be radiationtransmissive.

In another aspect, methods of making optoelectronic devices aredescribed herein. In some embodiments, a method of making anoptoelectronic device comprises providing a first electrode, providing asecond electrode and disposing a composite light emitting layer betweenthe first electrode and the second electrode. As described furtherherein, the light emitting composite layer can demonstrate a variety ofconstructions. In some embodiments, the first electrode and/or thesecond electrode is radiation transmissive. Additionally, in someembodiments, a method described herein further comprises disposing adielectric layer between the first electrode and the light emittingcomposite layer, or disposing a dielectric layer between the secondelectrode and the light emitting composite layer. In some embodiments, afirst dielectric layer is disposed between the light emitting compositelayer and the first electrode, and a second dielectric layer is disposedbetween the second electrode and the light emitting composite layer.

In some embodiments, a method of making an optoelectronic devicecomprises disposing a luminescent phase in a dielectric or electricallyinsulating host to provide a light emitting composite layer anddisposing the light emitting composite layer between a first electrodeand a second electrode. In some embodiments, the first electrode and/orthe second electrode is radiation transmissive. The luminescent phase,in some embodiments, comprises a conjugated polymer, a semiconductingpolymer, small molecules or nanoparticles or mixtures thereof.Additionally, in some embodiments, a dielectric layer or electricallyinsulating layer is positioned between the light emitting compositelayer and first and/or second electrode.

These and other embodiments are described in greater detail in thedetailed description which follows.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of an optoelectronic deviceaccording to one embodiment described herein.

FIG. 2 illustrates a cross-sectional view of an optoelectronic deviceaccording to one embodiment described herein.

FIG. 3 illustrates a cross-sectional view of an optoelectronic deviceaccording to one embodiment described herein.

FIG. 4 illustrates a cross-sectional view of an optoelectronic deviceaccording to one embodiment described herein.

FIG. 5 illustrates the frequency-dependent luminance of a series ofoptoelectronic devices having different dielectric layer thicknessesaccording to some embodiments described herein.

FIG. 6 illustrates the frequency-dependent luminance of a series ofoptoelectronic devices having different dielectric layer thicknessesaccording to some embodiments described herein.

FIG. 7 illustrates luminance of a FIPEL device according to variedoperating voltages and electric field frequencies in one embodimentdescribed herein.

FIG. 8 illustrates luminance of a FIPEL device according to variedoperating voltages and electric field frequencies in one embodimentdescribed herein.

FIG. 9 illustrates electroluminescent emission properties of a FIPELdevice according to one embodiment described herein.

DETAILED DESCRIPTION

Embodiments described herein can be understood more readily by referenceto the following detailed description, examples and drawings. Elements,apparatus, and methods described herein, however, are not limited to thespecific embodiments presented in the detailed description, examples anddrawings. It should be recognized that these embodiments are merelyillustrative of the principles of the present invention. Numerousmodifications and adaptations will be readily apparent to those of skillin the art without departing from the spirit and scope of the invention.

In addition, all ranges disclosed herein are to be understood toencompass any and all subranges subsumed therein. For example, a statedrange of “1.0 to 10.0” should be considered to include any and allsubranges beginning with a minimum value of 1.0 or more and ending witha maximum value of 10.0 or less, e.g., 1.0 to 5.3, or 4.7 to 10.0, or3.6 to 7.9.

The term “alkyl” as used herein, alone or in combination, refers to astraight or branched chain saturated hydrocarbon radical having from1-20 carbon atoms. In some embodiments, for example, alkyl is C₈₋₁₂alkyl.

The term “alkenyl” as used herein, alone or in combination, refers to astraight or branched chain hydrocarbon radical containing from 2-20carbon atoms and at least one carbon-carbon double bond. In someembodiments, for example, alkenyl comprises C₈₋₁₂ alkenyl.

The term “aryl” as used herein, alone or in combination, refers to anaromatic ring system radical. Aryl is also intended to include partiallyhydrogenated derivatives of carbocyclic systems.

The term “heteroaryl” as used herein, alone or in combination, refers toan aromatic ring radical with for instance 5 to 7 member atoms, or to anaromatic ring system radical with for instance from 7 to 18 memberatoms, containing one or more heteroatoms selected from nitrogen,oxygen, or sulfur heteroatoms, wherein N-oxides and sulfur monoxides andsulfur dioxides are permissible heteroaromatic substitutions; such as,e.g., furanyl, thienyl, thiophenyl, pyrrolyl, imidazolyl, pyrazolyl,triazolyl, tetrazolyl, thiazolyl, oxazolyl, isoxazolyl, oxadiazolyl,thiadiazolyl, isothiazolyl, pyridinyl, pyridazinyl, pyrazinyl,pyrimidinyl, quinolinyl, isoquinolinyl, benzofuranyl, benzothiophenyl,indolyl, and indazolyl, and the like. Heteroaryl is also intended toinclude the partially hydrogenated derivatives of the heterocyclicsystems.

In one aspect, optoelectronic devices are described herein. In someembodiments, optoelectronic devices described herein display FIPELarchitectures. Alternatively, in some embodiments, optoelectronicdevices described herein demonstrate organic light emitting device(OLED) architectures.

I. Field Induced Polymer Electroluminescent Device (FIPEL)

In some embodiments, a FIPEL described herein comprises a firstelectrode and a second electrode and a light emitting composite layerdisposed between the first electrode and the second electrode. Anelectrically insulating or dielectric layer is positioned between thelight emitting composite layer and the first electrode or secondelectrode. Moreover, in some embodiments, a first dielectric layer ispositioned between the first electrode and the light emitting compositelayer, and a second dielectric layer is positioned between the secondelectrode and the light emitting composite layer. In some embodiments,the first electrode is radiation transmissive and the second electrodeis non-radiation transmissive and/or reflective. Alternatively, in someembodiments, the first electrode and the second electrode are radiationtransmissive.

In some embodiments, a FIPEL described herein comprises a plurality oflight emitting composite layers positioned between the first and secondelectrodes. For example, in some embodiments, a plurality of lightemitting layers, each having a construction described in Section(s)I(C)(i)-(ii) herein, are positioned between the first and secondelectrodes. The light emitting layers can have various emission profilesthat, when combined, provide the desired emission profilecharacteristics from the FIPEL.

FIG. 1 illustrates a cross-sectional view of an optoelectronic devicehaving a FIPEL architecture according to one embodiment describedherein. The FIPEL (10) illustrated in FIG. 1 comprises a radiationtransmissive first electrode (11) and a metal second electrode (12). Alight emitting composite layer (13) is disposed between the radiationtransmissive first electrode (11) and metal second electrode (12). Thelight emitting composite layer (13) can have any construction recited inSection I(C) herein. In the embodiment of FIG. 1, a dielectric layer(14) or electrically insulating layer (14) is disposed between the metalsecond electrode (12) and the light emitting composite layer (13).

FIG. 2 illustrates a cross-sectional view of an optoelectronic devicehaving a FIPEL architecture according to one embodiment describedherein. The FIPEL (20) illustrated in FIG. 2 comprises a radiationtransmissive first electrode (21) and a metal second electrode (22). Alight emitting composite layer (23) is disposed between the radiationtransmissive first electrode (21) and metal second electrode (22). Thelight emitting composite layer (23) can have any construction recited inSection I(C) herein. In the embodiment of FIG. 2, a dielectric layer(24) or electrically insulating layer (24) is disposed between theradiation transmissive first electrode (21) and the light emittingcomposite layer (23).

FIG. 3 illustrates a cross-sectional view of an optoelectronic devicehaving a FIPEL architecture according to one embodiment describedherein. The FIPEL (30) illustrated in FIG. 3 comprises a radiationtransmissive first electrode (31) and a metal second electrode (32). Alight emitting composite layer (33) is disposed between the radiationtransmissive first electrode (31) and the metal second electrode (32).The light emitting composite layer (33) can have any constructionrecited in Section I(C) herein. A first dielectric layer (34) isdisposed between the light emitting composite layer (33) and theradiation transmissive first electrode (31). Further, a seconddielectric layer (35) is disposed between the light emitting compositelayer (33) and the metal second electrode (32).

Specific components of optoelectronic devices of a FIPEL architectureare now described.

A. First Electrode

In some embodiments, the first electrode is radiation transmissive.Radiation transmissive, as used herein, refers to the ability of amaterial to at least partially pass or transmit radiation in the visibleregion of the electromagnetic spectrum. In some embodiments, radiationtransmissive materials can pass electromagnetic radiation emitted bycomposite organic layers described herein with minimal absorbance orother interference.

Any radiation transmissive first electrode not inconsistent with theobjectives of the present invention may be used. In some embodiments, aradiation transmissive first electrode comprises a radiationtransmissive conducting oxide. Radiation transmissive conducting oxides,in some embodiments, can comprise one or more of indium tin oxide (ITO),gallium indium tin oxide (GITO), and zinc indium tin oxide (ZITO).

In some embodiments, a radiation transmissive first electrode comprisesone or more radiation transmissive polymeric materials, such aspolyanaline (PANI) and its chemical relatives. In some embodiments, aradiation transmissive first electrode comprises3,4-polyethylenedioxythiophene (PEDOT). In some embodiments, a radiationtransmissive first electrode comprises a carbon nanotube layer having athickness operable to at least partially pass visible electromagneticradiation. In some embodiments, a radiation transmissive first electrodecomprises a composite material comprising a nanoparticle phase dispersedin a polymeric phase. The nanoparticle phase, in some embodiments, cancomprise carbon nanotubes, fullerenes, or mixtures thereof. Moreover, insome embodiments, a radiation transmissive first electrode can comprisea metal layer having a thickness operable to at least partially passvisible electromagnetic radiation. In some embodiments, the metal layercan comprise elementally pure metals or alloys. Metals suitable for useas a radiation transmissive first electrode, in some embodiments,comprise high work function metals.

A radiation transmissive first electrode can have any thickness notinconsistent with the objectives of the present invention. In someembodiments, for example, a radiation transmissive first electrode has athickness of at least about 10 nm. In some embodiments, a radiationtransmissive first electrode has a thickness ranging from about 10 nm toabout 1 μm. A radiation transmissive first electrode, in someembodiments, has a thickness ranging from about 20 nm to about 750 nm,from about 50 nm to about 500 nm, from about 30 nm to about 200 nm, orfrom about 50 nm to about 150 nm. In some embodiments, a radiationtransmissive first electrode has a thickness greater than about 1 μm.

B. Second Electrode

A FIPEL described herein also comprises a second electrode. In someembodiments, a second electrode is non-radiation transmissive and/orreflective. In some embodiments, a second electrode is a metal. In someembodiments, a metal comprises elementally pure metals as well as metalalloys. In some embodiments, a second electrode comprises aluminum,nickel, copper, gold, silver, platinum, palladium or other transitionmetals or alloys thereof. In some embodiments, a second electrode isradiation transmissive. In some embodiments wherein a second electrodeis radiation transmissive, the second electrode comprises any radiationtransmissive material described herein for the radiation transmissivefirst electrode.

A second electrode can have any desired thickness. In some embodiments,a second electrode has a thickness ranging from about 10 nm to about 10μm. In some embodiments, a second electrode has a thickness ranging fromabout 50 nm to about 750 nm. A second electrode, in some embodiments,has a thickness ranging from about 100 nm to about 500 nm.

C. Light Emitting Composite Layer

A light emitting composite layer of a FIPEL described herein candemonstrate a variety of structures. In some embodiments, a lightemitting composite layer is a light emitting composite organic layer.

-   -   (i) In some embodiments, a light emitting composite organic        layer of a FIPEL described herein comprises a nanoparticle phase        disposed in a light emitting polymeric or oligomeric phase. In        some embodiments, the nanoparticle phase is dispersed throughout        the light emitting polymeric phase or oligomeric phase. In some        embodiments, for example, the nanoparticle phase comprises        nanoparticles uniformly or substantially uniformly distributed        throughout the light emitting polymeric or oligomeric phase. In        some embodiments, the nanoparticle phase comprises nanoparticles        heterogeneously dispersed in the light emitting polymeric or        oligomeric phase.

The nanoparticle phase, in some embodiments, is electrically isolatedfrom both the first electrode and the second electrode. In someembodiments, nanoparticles of the nanoparticle phase are not in contactand/or direct contact with the radiation transmissive first electrodeand/or second electrode. In some embodiments, the nanoparticles of thenanoparticle phase have a size in at least one dimension that is lessthan the thickness of the composite organic layer. In some embodiments,the nanoparticles of the nanoparticle phase have a size in everydimension that is less than the thickness of the composite organiclayer. In some embodiments, for example, nanoparticles of thenanoparticle phase have a length and/or other dimension(s) sufficientlyless than the thickness of the composite organic layer to inhibit orpreclude contact with the radiation transmissive first electrode and/orsecond electrode.

In some embodiments, the light emitting polymeric or oligomeric phasecomprises a conjugated polymer or oligomer and the nanoparticles of thenanoparticle phase are in direct contact with the light emittingconjugated polymer or oligomer. In some embodiments, nanoparticles ofthe nanoparticle phase are not coated and/or not dispersed in theconjugated polymeric or oligomeric phase by any secondary polymer oroligomer or dispersing agent.

In some embodiments, a nanoparticle phase is present in a compositeorganic layer in an amount in accordance with Table I.

TABLE I Weight Percent of Nanoparticle Phase in Composite Organic LayerNanoparticle Phase (Wt. %) 0.001-20   0.01-15   0.1-10 0.5-5   1-40.01-3   0.01-0.5 0.01-0.3 0.01-0.2  0.01-0.15

In some embodiments, a nanoparticle phase is present in a compositeorganic layer in an amount below the percolation threshold.

A nanoparticle phase disposed in a light emitting polymeric oroligomeric phase of a composite organic layer can comprise any type ofnanoparticle not inconsistent with the objectives of the presentinvention. In some embodiments, the nanoparticle phase comprises one ormore nanoparticle species suitable for application in a light emittingdevice. In some embodiments, the nanoparticle phase comprises nanotubes.In some embodiments, the nanotubes have a length shorter orsubstantially shorter than the thickness of the composite organic layer.In some embodiments, the nanotubes have a length not greater than about200 nm.

In some embodiments, nanoparticles of the nanoparticle phase comprisecarbon nanoparticles including, but not limited to, fullerenes, carbonnanotubes, carbon quantum dots, graphene particles or mixtures thereof.Fullerenes suitable for use in the nanoparticle phase, in oneembodiment, can comprise 1-(3-methoxycarbonyl)propyl-1-phenyl(6,6)C₆₁(PCBM), higher order fullerenes (C₇₀ and higher), andendometallofullerenes (fullerenes having at least one metal atomdisposed therein). Carbon nanotubes for use in the nanoparticle phase,according to some embodiments, can comprise single-walled nanotubes(SWNT), multi-walled nanotubes (MWNT), cut nanotubes, nitrogen and/orboron doped carbon nanotubes or mixtures thereof.

In some embodiments wherein the nanoparticle phase comprises carbonnanotubes, the carbon nanotubes have a length ranging from about 5 nm toabout 1 μm. In some embodiments, the carbon nanotubes have a lengthranging from about 10 nm to about 600 nm or from about 20 nm to about500 nm. In some embodiments, the carbon nanotubes have a length rangingfrom about 50 nm to about 300 nm or from about 100 nm to about 200 nm.In some embodiments, the carbon nanotubes have a length shorter orsubstantially shorter than the thickness of the composite organic layer.

In some embodiments, nanoparticles of the nanoparticle phase comprisemetal nanoparticles such as gold nanoparticles, silver nanoparticles,copper nanoparticles, nickel nanoparticles, and other transition metalnanoparticles. In some embodiments, nanoparticles comprise semiconductornanoparticles such as III/V and II/VI semiconductor nanoparticles,including cadmium selenide (CdSe) nanoparticles, cadmium telluride(CdTe) nanoparticles, gallium nitride (GaN) nanoparticles, galliumarsenide (GaAs) nanoparticles, indium phosphide (InP) nanoparticles ormixtures thereof. In some embodiments, semiconductor nanoparticlescomprise quantum dots including, but not limited to, II/VI and/or III/Vquantum dots.

Additionally, in some embodiments, nanoparticles of a nanoparticle phaseare luminescent. The presence of luminescent nanoparticles in thenanoparticle phase, in some embodiments, can permit tuning of theemission profile of an emissive composite organic layer describedherein. Any luminescent nanoparticles not inconsistent with theobjectives of the present invention may be used. In some embodiments,luminescent nanoparticles comprise quantum dots described herein.

In some embodiments, the nanoparticle phase comprises at least onenanowhisker. Carbon nanoparticles operable to form nanowhiskers,according to some embodiments, can comprise single-walled carbonnanotubes, multi-walled carbon nanotubes, and fullerenes. In oneembodiment, nanowhiskers comprise crystalline PCBM.

In some embodiments, a nanoparticle phase of a composite organic layerof an optoelectronic device comprises any combination or mixture ofnanoparticle species described herein. In some embodiments, for example,a composite organic layer comprises a mixture of carbon nanotubes (SWNTand/or MWNT) with semiconductor nanocrystals, such as II/VI and/or III/Vquantum dots.

In some embodiments of optoelectronic devices of FIPEL architecturedescribed herein, the light emitting polymeric or oligomeric phase ofthe composite organic layer comprises one or a plurality of conjugatedpolymers or oligomers. In some embodiments, the light emitting polymericor oligomeric phase comprises a blend of conjugated polymers oroligomers. In some embodiments, the blend of conjugated polymers oroligomers comprises a copolymer of the polymers or oligomers.

In some embodiments, a conjugated polymer or oligomer suitable for usein the light emitting polymeric or oligomeric phase comprises at leasttwo repeating units selected from the group consisting of repeatingunits A, B and C:

wherein

represents points of attachment in the polymer chain or oligomer chain,X is selected from the group consisting of S, O, Se and NR₅ and R₁, R₂,R₅, R₆, R₇, R₈ and R₉ are independently selected from the groupconsisting of hydrogen, C₁₋₂₀ alkyl, C₂₋₂₀ alkenyl, C₈₋₁₂ alkyl andC₈₋₁₂ alkenyl and R₃ and R₄ are independently selected from the groupconsisting of aryl and heteroaryl, wherein the alkyl and alkenyl of R₁,R₂, R₅, R₆, R₇, R₈ and R₉ and the aryl and heteroaryl of R₃ and R₄ areoptionally independently substituted one or more times with asubstituent selected from the group consisting of -alkyl, -alkenyl,-aryl, -heteroaryl, -alkyl-aryl, -alkyl-heteroaryl, -alkenyl-aryl and-alkenyl-heteroaryl.

In some embodiments, R₃ and R₄ are independently selected from the groupconsisting of pyridyl, pyranyl, pyridinyl, bipyridinyl, phenylpyridinyl,thienyl, furanyl, selenophenyl, fluorenyl, carbazolyl, pyrrolyl,quinolinyl, isoquionolinyl, purinyl, oxazolyl and isoxazolyl andoligomers thereof.

In some embodiments, repeating unit A of a conjugated polymer oroligomer described herein is selected from the group consisting of:

wherein R₅ is defined hereinabove.

In some embodiments, repeating unit B of a conjugated polymer oroligomer described herein is selected from the group consisting of:

In some embodiments, repeating unit C of a conjugated polymer oroligomer described herein is selected from the group consisting of:

In some embodiments, a conjugated polymer or oligomer of the lightemitting polymeric or oligomeric phase comprises repeating units A and Bis a conjugated polymer or oligomer of Formula (I):

wherein X, R₁, R₂, R₃, R₄, R₆ and R₇ are defined above and x and y areintegers independently ranging from 1 to 10,000. As described herein, insome embodiments, repeating units A and B of a conjugated polymer oroligomer of Formula (I) are arranged to provide an alternatingcopolymer, a block copolymer, statistical copolymer or a randomcopolymer.

In some embodiments, a conjugated polymer or oligomer of Formula (I) hasa weight average molecular weight (M_(w)) ranging from about 1,000 toabout 1,000,000. In some embodiments, a conjugated polymer or oligomerof Formula (I) has a number average molecular weight (M_(n)) rangingfrom about 500 to about 500,000.

In some embodiments, a conjugated polymer or oligomer of Formula (I)described herein is selected from the group consisting of:

wherein X, R₁, R₂, R₆ and R₇ are defined above and x and y are integersindependently ranging from 1 to 10,000.

In some embodiments, a conjugated polymer or oligomer of Formula (I)described herein is selected from the group consisting of:

wherein R₅ is defined hereinabove and x and y are integers independentlyranging from 1 to 10,000.

In some embodiments, a conjugated polymer or oligomer of the lightemitting polymeric or oligomeric phase comprising repeating units A andC is a conjugated polymer or oligomer of Formula (II):

wherein X, R₁, R₂, R₈ and R₉ are defined above and x and y are integersindependently ranging from 1 to 10,000. As described herein, in someembodiments, repeating units A and C of a conjugated polymer or oligomerof Formula (II) are arranged to provide an alternating copolymer, ablock copolymer, statistical copolymer or a random copolymer.

In some embodiments, a conjugated polymer or oligomer of Formula (II)has a weight average molecular weight (M_(w)) ranging from about 1,000to about 1,000,000. In some embodiments, a conjugated polymer oroligomer of Formula (II) has a number average molecular weight (M_(n))ranging from about 500 to about 500,000.

In some embodiments, a conjugated polymer or oligomer of Formula (II)described herein is selected from the group consisting of:

wherein R₅ is defined hereinabove and x and y are integers independentlyranging from 1 to 10,000.

In some embodiments, a conjugated polymer or oligomer of the lightemitting polymeric or oligomeric phase comprising repeating units B andC is a conjugated polymer or oligomer of Formula (III):

wherein R₃, R₄, R₆, R₇, R₈ and R₉ are defined above and x and y areintegers independently ranging from 1 to 10,000. As described herein, insome embodiments, repeating units B and C of a conjugated polymer oroligomer of Formula (III) are arranged to provide an alternatingcopolymer, a block copolymer, statistical copolymer or a randomcopolymer.

In some embodiments, a conjugated polymer or oligomer of Formula (III)has a weight average molecular weight (M_(w)) ranging from about 1,000to about 1,000,000. In some embodiments, a conjugated polymer oroligomer of Formula (III) has a number average molecular weight (M_(a))ranging from about 500 to about 500,000.

In some embodiments, a conjugated polymer or oligomer of Formula (III)described herein is selected from the group consisting of:

wherein R₆, R₇, R₈ and R₉ are defined above and x and y are integersindependently ranging from 1 to 10,000,

In some embodiments, a conjugated polymer or oligomer of Formula (III)described herein is selected from the group consisting of:

wherein x and y are integers independently ranging from 1 to 10,000.

In some embodiments, a conjugated polymer or oligomer of a lightemitting polymeric or oligomeric phase comprising repeating units A, Band C is a conjugated polymer or oligomer of Formula (IV):

wherein X, R₁, R₂, R₃, R₄, R₆, R₇, R₈ and R₉ are defined above and x, yand z are integers independently ranging from 1 to 10,000. As describedherein, in some embodiments, repeating units A, B and C of a conjugatedpolymer or oligomer of Formula (IV) are arranged to provide analternating copolymer, a block copolymer, statistical copolymer or arandom copolymer.

In some embodiments, a conjugated polymer or oligomer of Formula (IV)has a weight average molecular weight (M_(w)) ranging from about 1,000to about 1,000,000. In some embodiments, a conjugated polymer oroligomer of Formula (IV) has a number average molecular weight (M_(n))ranging from about 500 to about 500,000.

In some embodiments, a conjugated polymer of oligomer of Formula (IV)described herein is selected from the group consisting of:

wherein X, R₁, R₂, R₆, R₇, R₈ and R₉ are defined above and x, y and zare integers independently ranging from 1 to 10,000.

In some embodiments, a conjugated polymer or oligomer of Formula (IV)described herein is selected from the group consisting of:

wherein R₅ is defined hereinabove and x, y and z are integersindependently ranging from 1 to 10,000.

In some embodiments, a conjugated polymer or oligomer of the lightemitting polymeric or oligomeric phase comprising at least two repeatingunits selected from the group consisting of repeating units A, B, and Cdescribed herein can be provided using methods known in the art. Forexample, in some embodiments, a conjugated polymer or oligomercomprising at least two repeating units selected from the groupconsisting of repeating units A, B, and C described herein can beprovided using Suzuki coupling. Additional information regardingconjugated polymers and/or oligomers comprising at least two repeatingunits selected from the group consisting of repeating units A, B and Cdescribed herein is provided in Patent Cooperation Treaty ApplicationPublication WO2012/009344 (PCT Application No. PCT/US2011/043690, filedon Jul. 12, 2011), which is hereby incorporated by reference in itsentirety.

In some embodiments, a conjugated polymer or oligomer of the lightemitting polymeric or oligomeric phase comprises one or more species ofpolyfluorenes, polyflouorene copolymers and/or derivatives thereof. Insome embodiments, a conjugated polymer or oligomer comprises a speciesselected from the group consisting ofpoly(9,9-di-n-octylfluorenyl-2,7-diyl),poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)],poly(9,9-di-n-dodecylfluorenyl-2,7-diyl),poly(9,9-di-n-hexylfluorenyl-2,7-diyl),poly(9,9-di-n-octylfluorenyl-2,7-diyl),poly(9,9-n-dihexyl-2,7-fluorene-alt-9-phenyl-3,6-carbazole),poly[(9,9-dihexylfluoren-2,7-diyl)-alt-(2,5-dimethyl-1,4-phenylene)],poly[(9,9-dihexylfluoren-2,7-diyl)-co-(9-ethylcarbazol-2,7-diyl)],poly[(9,9-dihexylfluoren-2,7-diye-co-(anthracen-9,10-diyl)],poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene],poly[9,9-bis-(2-ethylhexyl)-9H-fluorene-2,7-diyl],poly((9,9-dihexyl-9H-fluorene-2,7-vinylene)-co-(1-methoxy-4-(2-ethylhexyloxy)-2,5-phenylenevinylene))(e.g., 90:10 or 95:5 mole ratio),poly(9,9-di-(2-ethylhexyl)-9H-fluorene-2,7-vinylene),poly(9,9-di-n-hexylfluorenyl-2,7-vinylene),poly[(9,9-di-(2-ethylhexyl)-9H-fluorene-2,7-vinylene)-co-(1-methoxy-4-(2-ethylhexyloxy)-2,5-phenylenevinylene)](e.g., 90:10 or 95:5 mole ratio) and mixtures thereof.

In some embodiments, a conjugated polymeric or oligomeric phase of anoptoelectronic device described herein comprises a polymer or oligomercomprising a structural unit of Formula (V):

wherein

represents points of attachment in the polymer or oligomer chain and R₁₆and R₁₇ are independently selected from the group consisting ofhydrogen, C₁₋₂₀ alkyl, C₂₋₂₀ alkenyl, C₈₋₁₂ alkyl and C₈₋₁₂ alkenyl andwherein the alkyl and alkenyl of R₁₆ and R₁₇ are optionallyindependently substituted one or more times with a substituent selectedfrom the group consisting of -alkyl, -alkenyl, -aryl, -heteroaryl,-alkyl-aryl, -alkyl-heteroaryl, -alkenyl-aryl and -alkenyl-heteroaryl.

In some embodiments, a conjugated polymeric or oligomeric phase of anoptoelectronic device described herein comprises one or more species ofpoly(phenyl vinylene)s, poly(phenyl vinylene) copolymers and/orderivatives thereof. In some embodiments, a conjugated polymeric oroligomeric phase of an optoelectronic device described herein comprisesa species selected from the group consisting ofpoly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene],poly(1-methoxy-4-(3-propyloxy-heptaisobutyl-PSS)-2,5-phenylenevinylene)-co-(1-methoxy-4-(2-ethylhexyloxy)-2,5-phenylenevinylene)(60:40), poly(1-methoxy-4-(O-disperse Red 1))-2,5-phenylenevinylene,poly(2,5-bis(1,4,7,10-tetraoxaundecyl)-1,4-phenylenevinylene),poly(2,5-dioctyl-1,4-phenylenevinylene),poly[(m-phenylenevinylene)-alt-(2,5-dihexyloxy-p-phenylenevinylene)],poly[(m-phenylenevinylene)-alt-(2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene)],poly[(m-phenylenevinylene)-co-(2,5-dioctoxy-p-phenylenevinylene)],poly[(o-phenylenevinylene)-alt-(2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene)],poly[(p-phenylenevinylene)-alt-(2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene)],poly[1-methoxy-4-(3-propyloxy-heptaisobutyl-PSS)-2,5-phenylenevinylene],poly[1-methoxy-4-(3-propyloxy-heptaisobutyl-PSS)-2,5-phenylenevinylene]-co-[1-methoxy-4-(2-ethylhexyloxy)-2,5-phenylenevinylene](30:70), poly[2,5-bisoctyloxy)-1,4-phenylenevinylene],poly[2,5-bis(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene],poly[2-(2′,5′-bis(2″-ethylhexyloxy)phenyl)-1,4-phenylenevinylene],poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene],poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene],poly[5-methoxy-2-(3-sulfopropoxy)-1,4-phenylenevinylene],poly[tris(2,5-bis(hexyloxy)-1,4-phenylenevinylene)-alt-(1,3-phenylenevinylene)],poly{[2-[2′,5′-bis(2″-ethylhexyloxy)phenyl]-1,4-phenylenevinylene]-co-[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene]},and mixtures thereof.

In some embodiments, a conjugated polymer or oligomer of the lightemitting polymeric or oligomeric phase comprises one or more species ofpoly(naphthalene vinylene)s, poly(naphthalene vinylene) copolymersand/or derivatives thereof. In some embodiments, a conjugated polymer oroligomer of the light emitting polymer or oligomer phase comprises oneor more species of cyano-poly(phenylene vinylene)s, cyano-poly(phenylenevinylene) copolymers and/or derivatives thereof. In some embodiments, aconjugated polymer or oligomer of the light emitting polymeric oroligomeric phase comprises one or more species of poly(fluorenyleneethynylene)s, poly(fluorenylene ethynylene) copolymers and/orderivatives thereof. In some embodiments, a conjugated polymer oroligomer of the light emitting polymeric or oligomeric phase comprisesone or more species of poly(phenylene ethynylene)s, poly(phenyleneethynylene) copolymers and/or derivatives thereof. In some embodiments,a conjugated polymer or oligomer of the light emitting polymeric oroligomeric phase comprises one or more species of polythiophenes,polythiophene copolymers and/or derivatives thereof.

In some embodiments, a conjugated polymer or oligomer of the lightemitting polymeric or oligomeric phase comprises a species selected fromthe group consisting ofpoly(2,5-di(3,7-dimethyloctyloxy)cyanoterephthalylidene),poly(2,5-di(hexyloxy)cyanoterephthalylidene),poly(5-(2-ethylhexyloxy)-2-methoxy-cyanoterephthalylidene),poly(5-(3,7-dimethyloctyloxy)-2-methoxy-cyanoterephthalylidene),poly(9,9-dioctylfluorenyl-2,7-yleneethynylene),poly(9,9-didodecylfluoroenyl-2,7-yleneethylnylene),poly[9,9-di(2′-ethylhexyl)fluoren-2,7-yleneethynylene],poly[9,9-di(3′,7′-dimethyloctyl)fluoren-2,7-yleneethynylene],poly(2,5-dicyclohexylphenylene-1,4-ethynylene),poly(2,5-didodecylphenylene-1,4-ethynylene),poly(2,5-dioctylphenylene-1,4-ethynylene),poly(2,5-di(2′-ethylhexyl)-1,4-ethynylene),poly(2,5-di(3′,7′-dimethyloctyl)phenylene-1,4-ethynylene),poly(3-butylthiophene-2,5-diyl) (regiorandom or regioregular),poly(3-cyclohexyl-4-methylthiophene-2,5-diyl),poly(3-cyclohexylthiophene-2,5-diyl),poly(3-decyloxythiophene-2,5-diyl), poly(3-decylthiophene-2,5-diyl)(regiorandom or regioregular), poly(3-dodecylthiophene-2,5-diyl)(regiorandom or regioregular), poly(3-hexylthiophene-2,5-diyl)(regiorandom or regioregular), poly(3-octylthiophene-2,5-diyl)(regiorandom or regioregular),poly(3-octylthiophene-2,5-diyl-co-3-decyloxythiophene-2,5-diyl),poly(thiophene-2,5-diyl),poly[(2,5-didecyloxy-1,4-phenylene)-alt-(2,5-thienylene)],poly(2,6-naphthalenevinylene), poly(p-xylene tetrahydrothiopheniumchloride), poly(2,5 pyridine), poly(3,5 pyridine),poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodiumsalt-alt-1,4-phenylene), poly[(2,5-bis(2-(N,N-diethylammoniumbromide)ethoxy)-1,4-phenylene)-alt-1,4-phenylene],poly[5-methoxy-2-(3-sulfopropoxy)-1,4-phenylenevinylene]potassium salt,poly{[2,5-bis(2-(N,N-diethylamino)ethoxy)-1,4-phenyleneFalt-1,4-phenylene}and mixtures thereof.

In some embodiments, a light emitting composite organic layer furthercomprises a triplet emitter phase in addition to the light emittingpolymeric or oligomeric phase and the nanoparticle phase. A tripletemitter phase can comprise any phosphorescent compound not inconsistentwith the objectives of the present invention. In some embodiments,phosphorescent compounds comprise transition metal complexes, includingorganometallic complexes. In some embodiments, a transition metalcomplex comprises an iridium or platinum metal center. A phosphorescenttransition metal complex, in some embodiments, istris(2-phenylpyridine)iridium [Ir(ppy)₃] or platinum octaethylporphine(PtOEP). In some embodiments, a triplet emitter phase comprises one ormore phosphorescent transition metal complexes selected from Table II:

TABLE II Transition Metal Complexes of Triplet Emitter Phase[Os(bpy)₃]²⁺ [Os(phen)₃]²⁺ Ir(ppy)₃ Ir(4,6-dFppy)₂(pic) Ir(piq)₂(acac)[Os(phen)₂(dppee)]²⁺ [Ru(bpy)₃]²⁺ Re(phen)(CO)₃(Cl) Pt(bhq)₂ Ir(piq)₃Pt(ppy)₂ Pt(ph-salen) Ir(btp)₂(acac) Pt(ONN-t-Bu)Cl Pt(dphpy)(C0)Pt(Me₄-salen) Pt(thpy)₂ Pt(4,6-dFppy)(acac) Pt(ppy)(CO)(Cl)Pt(thpy)(CO)(Cl) Ir(ppy)₂(CO)(CL) Pt(qtl)₂ Re(phbt)(CO)₄ Pt(qol)₂Pd(thpy)₂ Pd(qol)₂ [Pt(bpy)₂]²⁺ [Rh(bpy)₃]³⁺

In some embodiments, a transition metal complex of a triplet emitterphase is operable to participate in energy transfer with one or morecomponents of the light emitting composite organic layer. In someembodiments, for instance, a phosphorescent transition metal complex ofthe triplet emitter phase is operable to receive energy from the lightemitting polymeric or oligomeric phase of the composite organic layer,such as through resonant energy transfer. Resonant energy transfer, insome embodiments, can include Forster energy transfer and/or Dexterenergy transfer. In some embodiments, a phosphorescent transition metalcomplex of the triplet emitter phase is operable to receive tripletexcited states from the singlet emitter polymeric or oligomeric phasefor subsequent radiative relaxation of the received triplet excitedstates to the ground state. Moreover, in some embodiments, aphosphorescent transition metal complex of the triplet emitter phase isalso operable to receive singlet excited states from the singlet emitterpolymeric or oligomeric phase for subsequent radiative relaxation of thereceived singlet excited states to the ground state. In someembodiments, relaxation of the received singlet excited state occursthrough a phosphorescent pathway.

In some embodiments, the triplet emitter phase comprises phosphors. Insome embodiments, phosphors of a triplet emitter phase comprise one ormore of Lanthanide and/or Actinide series elements (rare earth emitters)such as erbium, ytterbium, dysprosium, or holmium; metals such astransition metals; metal oxides; metal sulfides; or combinationsthereof. In some embodiments, phosphors comprise doped yttrium oxides(Y₂O₃) including Y₂O₃:Eu, Y₂O₃:Zn, and Y₂O₃:Ti. In some embodimentsphosphors comprise doped zinc sulfides including ZnS:Cu, ZnS:Mn, ZnS:Gaor ZnS:Gd or mixtures thereof. In another embodiment, phosphors comprisedoped calcium sulfides including CaS:Er, CaS:Tb, CaS:Eu or mixturesthereof. In a further embodiment, phosphors comprise doped zinc oxidesincluding ZnO:Eu. In one embodiment, phosphors comprise doped strontiumsulfides including SrS:Ca, SrS:Mn, SrS:Cu or mixtures thereof. In someembodiments, a triplet emitter phase comprises any mixture ofphosphorescent transition metal complexes and phosphors describedherein.

A triplet emitter phase can be combined with the light emittingpolymeric or oliogmeric phase in any manner not inconsistent with theobjectives of the present invention. In some embodiments, the tripletemitter phase is dispersed throughout the light emitting polymeric oroligomeric phase. In one embodiment, for example, one or morephosphorescent transition metal complexes of the triplet emitter phaseare blended with one or more light emitting conjugated polymers oroligomers to disperse the transition metal complexes throughout theconjugated polymers or oligomers.

In some embodiments, a triplet emitter phase is present in the lightemitting composite organic layer in any desired amount not inconsistentwith the objectives of the present invention. In some embodiments, atriplet emitter phase is present in the light emitting composite organiclayer in any amount in accordance with Table III:

TABLE III Weight Percent of Triplet Emitter Phase in Composite OrganicLayer Triplet Emitter Phase (Wt. %) 0.01-25   0.05-30   0.1-15  0.1-10   0.5-5   1-30 5-30 7-30 8-30 9-30 10-30  ≧6 ≧7 ≧8 ≧9 ≧10 ≧11 ≧12≧15

In some embodiments, the light emitting polymeric or oligomeric phaseand the nanoparticle phase of the composite organic layer are disposedin a dielectric host material. When present, the triplet emitter phase,in some embodiments, is also disposed in the dielectric host material.In some embodiments, the dielectric host material is radiationtransmissive.

A dielectric host material for the light emitting polymeric oroligomeric phase, the nanoparticle phase and optionally the tripletemitter phase, in some embodiments, comprises a dielectric polymericmaterial. In some embodiments, use of a dielectric polymeric hostpermits light emitting composite layers to achieve increased thicknessesleading to device processing advantages without sacrificing efficiencyor other performance characteristics. Surprisingly, in some embodiments,use of a dielectric polymeric host permits the formation of thickerlight emitting composite layers having suitable light emissionproperties without the concomitant use of additional light emittingpolymeric or oligomeric phase and/or nanoparticle phase.

In some embodiments, a dielectric host comprises a polystyrene (PS),polyacrylate (PAA), polymethacrylate (PMA), polymethylmethacryalte(PMMA), polycarbonate (PC) or mixtures thereof. In some embodiments, adielectric host comprises a polyolefin, such as polyethylene,polypropylene or mixtures thereof. In some embodiments, a dielectrichost comprises polyethylene terephthalate (PET). Additionally, in someembodiments, a dielectric host comprises a fluoropolymer, includingperfluorocyclobutyl (PFCB) polymers, polyvinyl fluoride (PVF) orpolyvinylidene fluoride (PVDF) or mixtures thereof.

The dielectric polymeric host can be present in the light emittingcomposite organic layer in any desired amount not inconsistent with theobjectives of the present invention. In some embodiments, the dielectricpolymeric host is present in an amount of at least about 50 weightpercent or at least about 70 weight percent. The dielectric polymerichost, in some embodiments, is present in an amount ranging from about 30weight percent to about 80 weight percent or from about 40 weightpercent to about 75 weight percent. In some embodiments, the dielectricpolymeric host is present in an amount ranging from about 50 weightpercent to about 70 weight percent.

In some embodiments, the ratio of dielectric polymeric host to the lightemitting polymeric or oligomeric phase in a light emitting compositeorganic layer ranges from about 1:5 to about 5:1. In some embodiments,the ratio of dielectric polymeric host to light emitting polymeric oroligomeric phase in a light emitting composite organic layer ranges fromabout 1:4 to about 4:1, from about 1:3 to about 3:1, or from about 1:2to about 2:1. In some embodiments, the ratio of dielectric polymerichost to light emitting polymeric or oligomeric phase in a light emittingcomposite organic layer ranges from about 1:1 to about 4:1.

A light emitting composite organic layer can have any desired thicknessnot inconsistent with the objectives of the present invention. In someembodiments, for instance, a light emitting composite organic layer has,a thickness ranging from about 10 nm to about 30 μm. In someembodiments, a light emitting composite organic layer has a thicknessranging from about 10 nm to about 10 μm. In some embodiments, a lightemitting composite organic layer has a thickness ranging from about 80nm to about 1 μm, from about 100 nm to about 500 nm or from about 150 nmto about 400 nm. In some embodiments, a light emitting composite organiclayer has a thickness ranging from about 50 nm to about 300 nm, fromabout 40 nm to about 200 nm or from about 80 nm to about 150 nm. In someembodiments, a light emitting composite organic layer has a thickness ofat least about 300 nm or at least about 400 nm. A light emittingcomposite organic layer, in some embodiments, has a thickness rangingfrom about 300 nm to about 5 μm or from about 400 nm to about 10 μm. Insome embodiments, a light emitting composite organic layer has athickness ranging from about 1 μm to about 30 μm.

-   -   (ii) Alternatively, a light emitting composite organic layer of        a FIPEL described herein, in some embodiments, comprises a        singlet emitter phase and a triplet emitter phase. In some        embodiments, a singlet emitter phase comprises a conjugated        polymer. Suitable conjugated polymers for a singlet emitter        phase can comprise any of the conjugated polymers recited in        Section I(C)(i) herein. In some embodiments, for example, a        singlet emitter phase comprises one or more conjugated polymers        selected from the group consisting of        poly(9,9-di-n-octylfluorenyl-2,7-diyl),        poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)],        poly(9,9-di-n-dodecylfluorenyl-2,7-diyl),        poly(9,9-di-n-hexylfluorenyl-2,7-diyl),        poly(9,9-n-dihexyl-2,7-fluorene-alt-9-phenyl-3,6-carbazole),        poly[(9,9-dihexylfluoren-2,7-diyl)-alt-(2,5-dimethyl-1,4-phenylene)],        poly[(9,9-dihexylfluoren-2,7-diyl)-co-(9-ethylcarbazol-2,7-diyl)],        poly[(9,9-dihexylfluoren-2,7-diyl)-co-(anthracen-9,10-diyl)],        poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene],        poly[9,9-bis-(2-ethylhexyl)-9H-fluorene-2,7-diyl],        poly((9,9-dihexyl-9H-fluorene-2,7-vinylene)-co-(1-methoxy-4-(2-ethylhexyloxy)-2,5-phenylenevinylene))        (e.g., 90:10 or 95:5 mole ratio),        poly(9,9-di-(2-ethylhexyl)-9H-fluorene-2,7-vinylene),        poly(9,9-di-n-hexylfluorenyl-2,7-vinylene),        poly[(9,9-di-(2-ethylhexyl)-9H-fluorene-2,7-vinylene)-co-(1-methoxy-4-(2-ethylhexyloxy)-2,5-phenylenevinylene)]        (e.g., 90:10 or 95:5 mole ratio), and mixtures thereof.

In some embodiments, a singlet emitter phase of an optoelectronic devicedescribed herein comprises a polymer or oligomer comprising a structuralunit of Formula (V):

wherein

represents points of attachment in the polymer or oligomer chain and R₁₆and R₁₇ are independently selected from the group consisting ofhydrogen, C₁₋₂₀ alkyl, C₂₋₂₀ alkenyl, C₈₋₁₂ alkyl and C₈₋₁₂ alkenyl andwherein the alkyl and alkenyl of R₁₆ and R₁₇ are optionallyindependently substituted one or more times with a substituent selectedfrom the group consisting of -alkyl, -alkenyl, -aryl, -heteroaryl,-alkyl-aryl, -alkyl-heteroaryl, -alkenyl-aryl and -alkenyl-heteroaryl.

In some embodiments, a singlet emitter phase comprises one or morepoly(phenyl vinylene)s, poly(phenyl vinylene) copolymers and/orderivatives thereof. In some embodiments, a singlet emitter phasecomprises a conjugated polymer selected from the group consisting ofpoly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene],poly(1-methoxy-4-(3-propyloxy-heptaisobutyl-PSS)-2,5-phenylenevinylene)-co-(1-methoxy-4-(2-ethylhexyloxy)-2,5-phenylenevinylene)(60:40), poly(1-methoxy-4-(O-disperse Red 1))-2,5-phenylenevinylene,poly(2,5-bis(1,4,7,10-tetraoxaundecyl)-1,4-phenylenevinylene),poly(2,5-dioctyl-1,4-phenylenevinylene),poly[(m-phenylenevinylene)-alt-(2,5-dihexyloxy-p-phenylenevinylene)],poly[(m-phenylenevinylene)-alt-(2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene)],poly[(m-phenylenevinylene)-co-(2,5-dioctoxy-p-phenylenevinylene)],poly[(o-phenylenevinylene)-alt-(2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene)],poly[(p-phenylenevinylene)-alt-(2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene)],poly[1-methoxy-4-(3-propyloxy-heptaisobutyl-PSS)-2,5-phenylenevinylene],poly[1-methoxy-4-(3-propyloxy-heptaisobutyl-PSS)-2,5-phenylenevinylene]-co-[1-methoxy-4-(2-ethylhexyloxy)-2,5-phenylenevinylene](30:70), poly[2,5-bisoctyloxy)-1,4-phenylenevinylene],poly[2,5-bis(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene],poly[2-(2′,5′-bis(2″-ethylhexyloxy)phenyl)-1,4-phenylenevinylene],poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene],poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene],poly[5-methoxy-2-(3-sulfopropoxy)-1,4-phenylenevinylene],poly[tris(2,5-bis(hexyloxy)-1,4-phenylenevinylene)-alt-(1,3-phenylenevinylene)],poly{[2-[2′,5′-bis(2″-ethylhexyloxy)phenyl]-1,4-phenylenevinylene]-co-[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene]},and mixtures thereof.

Moreover, in some embodiments, a singlet emitter phase comprises one ormore poly(naphthalene vinylene)s, poly(naphthalene vinylene) copolymersand/or derivatives thereof. A singlet emitter phase, in someembodiments, comprises one or more cyano-poly(phenylene vinylene)s,cyano-poly(phenylene vinylene) copolymers and/or derivatives thereof. Insome embodiments, a singlet emitter phase comprises one or more speciesof poly(fluorenylene ethynylene)s, poly(fluorenylene ethynylene)copolymers and/or derivatives thereof. In some embodiments, a singletemitter phase comprises one or more poly(phenylene ethynylene)s,poly(phenylene ethynylene) copolymers and/or derivatives thereof. Insome embodiments, a singlet emitter phase comprises one or morepolythiophenes, polythiophene copolymers and/or derivatives thereof.

A singlet emitter phase of a light emitting composite organic layer, insome embodiments, comprises a conjugated polymer selected from the groupconsisting of poly(2,5-di(3,7-dimethyloctyloxy)cyanoterephthalylidene),poly(2,5-di(hexyloxy)cyanoterephthalylidene),poly(5-(2-ethylhexyloxy)-2-methoxy-cyanoterephthalylidene),poly(5-(3,7-dimethyloctyloxy)-2-methoxy-cyanoterephthalylidene),poly(9,9-dioctylfluorenyl-2,7-yleneethynylene),poly(9,9-didodecylfluoroenyl-2,7-yleneethylnylene),poly[9,9-di(2′-ethylhexyl)fluoren-2,7-yleneethynylene],poly[9,9-di(3′,7′-dimethyloctyl)fluoren-2,7-yleneethynylene],poly(2,5-dicyclohexylphenylene-1,4-ethynylene),poly(2,5-didodecylphenylene-1,4-ethynylene),poly(2,5-dioctylphenylene-1,4-ethynylene),poly(2,5-di(2′-ethylhexyl)-1,4-ethynylene),poly(2,5-di(3′,7′-dimethyloctyl)phenylene-1,4-ethynylene),poly(3-butylthiophene-2,5-diyl) (regiorandom or regioregular),poly(3-cyclohexyl-4-methylthiophene-2,5-diyl),poly(3-cyclohexylthiophene-2,5-diyl),poly(3-decyloxythiophene-2,5-diyl), poly(3-decylthiophene-2,5-diye(regiorandom or regioregular), poly(3-dodecylthiophene-2,5-diyl)(regiorandom or regioregular), poly(3-hexylthiophene-2,5-diyl)(regiorandom or regioregular), poly(3-octylthiophene-2,5-diyl)(regiorandom or regioregular),poly(3-octylthiophene-2,5-diyl-co-3-decyloxythiophene-2,5-diyl),poly(thiophene-2,5-diyl),poly[(2,5-didecyloxy-1,4-phenylene)-alt-(2,5-thienylene)],poly(2,6-naphthalenevinylene), poly(p-xylene tetrahydrothiopheniumchloride), poly(2,5 pyridine), poly(3,5 pyridine),poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodiumsalt-alt-1,4-phenylene), poly[(2,5-bis(2-(N,N-diethylammoniumbromide)ethoxy)-1,4-phenylene)-alt-1,4-phenylene],poly[5-methoxy-2-(3-sulfopropoxy)-1,4-phenylenevinylene]potassium salt,poly{[2,5-bis(2-(N,N-diethylamino)ethoxy)-1,4-phenylene]-alt-1,4-phenylene},and mixtures thereof.

Further, in some embodiments, a singlet emitter phase comprises aconjugated polymer or oligomer described in Patent Cooperation TreatyApplication No. PCT/US2011/043690 filed on Jul. 12, 2011, which isincorporated herein by reference in its entirety.

In some embodiments, a singlet emitter phase of a light emittingcomposite organic layer described herein comprises a fluorescent smallmolecule. In some embodiments, for instance, a fluorescent smallmolecule comprises a metal chelate species, a fluorescent dye, aconjugated dendrimer, or mixtures or combinations thereof. In someembodiments, a fluorescent small molecule comprises one or more ofperylene, rubrene, quinacridone and mixtures, combinations and/orderivatives thereof. A fluorescent small molecule, in some embodiments,comprises anthracene or related compounds or a coumarin. In someembodiments, a fluorescent small molecule comprisestris(8-hydroxyquinoline) aluminum (Alq₃).

Moreover, in some embodiments, a singlet emitter phase can comprise oneor more conjugated polymers or oligomers and one or more fluorescentsmall molecules. A conjugated polymer or oligomer can be combined with afluorescent small molecule in a light emitting composite organic layerin any manner not inconsistent with the objectives of the presentinvention. In some embodiments, for example, one or more fluorescentsmall molecules are blended with one or more conjugated polymers oroligomers to provide a singlet emitter phase. Combining a plurality ofpolymeric, oligomeric, and/or small molecule singlet emitters can, insome embodiments, permit tuning of the emissive properties of aluminescent organic phase of a composite organic layer described herein.

As described herein, the light emitting composite organic layer alsocomprises a triplet emitter phase. A triplet emitter phase can compriseany phosphorescent compound not inconsistent with the objectives of thepresent invention. In some embodiments, the triplet emitter phase cancomprise any of the triplet chemical species described in SectionI(C)(i) hereinabove.

A triplet emitter phase can be combined with a singlet emitter phase ofa light emitting composite organic layer described herein in any mannernot inconsistent with the objectives of the present invention. In someembodiments, the triplet emitter phase is dispersed throughout thesinglet emitter phase. In one embodiment, for example, one or morephosphorescent transition metal complexes of the triplet emitter phaseare blended with one or more conjugated polymers or oligomers of thesinglet emitter phase to disperse the transition metal complexesthroughout the conjugated polymers or oligomers.

The triplet emitter phase can be present in the light emitting compositeorganic layer in any desired amount not inconsistent with the objectivesof the present invention. In some embodiments, the triplet emitter phaseis present in the light emitting composite organic layer in an amount inaccordance with Table III hereinabove.

In some embodiments, the light emitting composite organic layer furthercomprises a nanoparticle phase disposed in the composite layer. In someembodiments, a nanoparticle phase is disposed in the singlet emitterphase. In other embodiments, a nanoparticle phase is disposed in thetriplet emitter phase. One or more nanoparticle phases can also, in someembodiments, be disposed in both the singlet emitter phase and thetriplet emitter phase. Moreover, a nanoparticle phase can comprise anynanoparticle phase described in Section I herein. Further, thenanoparticle phase can be present in the composite organic layer in anyamount not inconsistent with the objectives of the present invention. Insome embodiments, the nanoparticle phase is present in the compositeorganic layer in an amount consistent with Table I herein.

In some embodiments, the singlet emitter phase, the triplet emitterphase, and/or a nanoparticle phase of the light emitting composite layerare disposed in a dielectric host material. A dielectric host materialfor the singlet emitter phase and the triplet emitter phase, in someembodiments, is radiation transmissive.

In some embodiments, a dielectric host material for the singlet emitterphase and the triplet emitter phase is a polymeric material. In someembodiments, use of a dielectric polymeric host permits light emittingorganic composite layers to achieve increased thicknesses leading todevice processing advantages without sacrificing efficiency or otherperformance characteristics. Surprisingly, in some embodiments, use of adielectric polymeric host permits the formation of thicker lightemitting composite layers having suitable light emission propertieswithout the concomitant use of additional singlet emitter phase, tripletemitter phase and/or nanoparticle phase.

In some embodiments, a dielectric host comprises a polystyrene (PS),polyacrylate (PAA), polymethacrylate (PMA), polymethylmethacryalte(PMMA), polycarbonate (PC) or mixtures thereof. In some embodiments, adielectric host comprises a polyolefin, such as polyethylene,polypropylene or mixtures thereof. In some embodiments, a non-conjugatedhost comprises polyethylene terephthalate (PET). Additionally, in someembodiments, a dielectric host comprises a fluoropolymer, includingperfluorocyclobutyl (PFCB) polymers, polyvinyl fluoride (PVF) orpolyvinylidene fluoride (PVDF) or mixtures thereof.

The dielectric polymeric host can be present in the light emittingcomposite organic layer in any desired amount not inconsistent with theobjectives of the present invention. In some embodiments, the dielectricpolymeric host is present in an amount of at least about 50 weightpercent or at least about 70 weight percent. The dielectric polymerichost, in some embodiments, is present in an amount ranging from about 30weight percent to about 80 weight percent or from about 40 weightpercent to about 75 weight percent. In some embodiments, the dielectricpolymeric host is present in an amount ranging from about 50 weightpercent to about 70 weight percent.

In some embodiments, the ratio of dielectric polymeric host to singletemitter phase in a light emitting composite organic layer ranges fromabout 1:5 to about 5:1. In some embodiments, the ratio of dielectricpolymeric host to singlet emitter phase in a light emitting compositeorganic layer ranges from about 1:4 to about 4:1, from about 1:3 toabout 3:1, or from about 1:2 to about 2:1. In some embodiments, theratio of dielectric polymeric host to singlet emitter phase in a lightemitting composite organic layer ranges from about 1:1 to about 4:1.

A light emitting composite organic layer comprising a singlet emitterphase and a triplet emitter phase can have any desired thickness notinconsistent with the objectives of the present invention. In someembodiments, for instance, a light emitting composite organic layer hasa thickness ranging from about 10 nm to about 30 μm. In someembodiments, a composite organic layer has a thickness ranging fromabout 10 nm to about 10 μm. In some embodiments, a composite organiclayer has a thickness ranging from about 80 nm to about 1 μm, from about100 nm to about 500 nm, or from about 150 nm to about 400 nm. In someembodiments, a composite organic layer has a thickness ranging fromabout 50 nm to about 300 nm, from about 40 nm to about 200 nm, or fromabout 80 nm to about 150 nm. In some embodiments, a composite organiclayer has a thickness of at least about 300 nm or at least about 400 nm.A composite organic layer, in some embodiments, has a thickness rangingfrom about 300 nm to about 5 μm or from about 400 nm to about 10 μm. Insome embodiments, a composite organic layer has a thickness ranging fromabout 1 μm to about 30 μm.

In some embodiments, a FIPEL described herein comprises a plurality oflight emitting composite layers positioned between the first and secondelectrodes. For example, in some embodiments, a plurality of lightemitting layers, each having a construction described in Section(s)I(C)(i)-(ii) herein, are positioned between the first and secondelectrodes. The light emitting layers can have various emission profilesthat, when combined, provide the desired emission profilecharacteristics from the FIPEL.

Further, in some embodiments, a FIPEL described herein comprises one ormore charge generation layers. Charge generation layers, in someembodiments, are positioned at the interface of a light emittingcomposite organic layer and dielectric or electrically insulating layer.In some embodiments wherein a plurality of light emitting compositeorganic layers are present, charge generation layers are positionedbetween the light emitting composite organic layers. For example, insome embodiments, a charge generation layer is positioned at one or moreinterfaces of light emitting composite organic layers.

A charge generation layer can have any desired construction operable togenerate charge during operation of the FIPEL. In some embodiments, acharge generation layer is metallic, semi-metallic or semiconducting. Acharge generation layer, in some embodiments, comprises metalnanoparticles, semiconducting nanoparticles or conductive smallmolecules. In some embodiments, metal nanoparticles comprise transitionmetal nanoparticles, semiconducting nanoparticles comprise inorganicsemiconductors and small molecules comprise one or more porphyrins oralkali metal salts, such a LiF. In some embodiments, a charge generationlayer comprises a conducting or semiconducting polymer. In oneembodiment, for example, a charge generation layer comprises PEDOT.

A charge generation layer can have any desired thickness notinconsistent with the objectives of the present invention. In someembodiments, a charge generation layer has a thickness ranging fromabout 1 nm to about 20 nm. A charge generation layer, in someembodiments, has a thickness ranging from about 2 nm to about 15 nm orfrom about 1 nm to about 10 nm. In some embodiments, a charge generationlayer has a thickness less than 1 nm or greater than 20 nm.

D. Dielectric or Electrically Insulating Layer(s)

As described herein, an optoelectronic device having a FIPELarchitecture comprises an electrically insulating layer between thelight emitting composite layer and the first electrode or secondelectrode. Moreover, in some embodiments, a first dielectric layer ispositioned between the first electrode and the light emitting compositelayer, and a second dielectric layer is positioned between the secondelectrode and the light emitting composite layer. The light emittingcomposite layer can comprise any light emitting composite layerdescribed in Section I(C)(i)-(ii) herein.

A dielectric layer of an optoelectronic device having a FIPELarchitecture described herein can comprise any insulating material notinconsistent with the objectives of the present invention. For example,in some embodiments, a dielectric layer comprises one or more inorganicoxides. In some embodiments, an inorganic oxide comprises a transitionmetal oxide, alumina (Al₂O₃), silica (SiO₂) or mixtures thereof.

In some embodiments, a dielectric layer comprises one or more polymericmaterials. In some embodiments, suitable polymers for use in adielectric layer comprise fluorinated polymers such as polyvinylidenefluoride (PVDF), poly(vinylidene fluoride-trifluoroethylene)(PVDF-TrFE), poly(vinyl fluoride) (PVF), polytetrafluoroethylene (PTFE),perfluoropropylene, polychlorotrifluoroethylene (PCTFE), or copolymersand combinations thereof. In some embodiments, a dielectric polymericmaterial comprises one or more polyacrylates such as polyacrylic acid(PAA), poly(methacrylate) (PMA), poly(methylmethacrylate) (PMMA), orcopolymers and combinations thereof. In some embodiments, a dielectricpolymeric material comprises polyethylenes, polypropylenes,polystyrenes, poly(vinylchloride)s, polycarbonates, polyamides,polyimides, or copolymers and combinations thereof. Polymeric dielectricmaterials described herein can have any molecular weight (M_(w)) andpolydispersity not inconsistent with the objectives of the presentinvention.

In some embodiments, a dielectric layer further comprises nanoparticles.In some embodiments, nanoparticles of a dielectric layer can compriseany nanoparticles described in Section I herein. In some embodiments,nanoparticles are present in the dielectric layer in an amount less thanabout 0.5 weight percent or less than about 0.1 weight percent. In someembodiments, nanoparticles are present in the dielectric layer in anamount ranging from about 0.01 weight percent to about 0.1 weightpercent.

Moreover, in some embodiments, an electrically insulating material of adielectric layer is selected based on its dielectric constant and/orbreakdown voltage. For instance, in some embodiments, an insulatingmaterial of a dielectric layer has a high dielectric constant and/or ahigh breakdown voltage. In addition, a dielectric layer described hereincan have any thickness not inconsistent with the objectives of thepresent invention.

An electrically insulating layer or dielectric layer of a FIPELarchitecture can have any desired thickness not inconsistent with theobjectives of the present invention. In some embodiments, anelectrically insulating or dielectric layer has a thickness ranging fromabout 1 μm to about 50 μm. In some embodiments, an electricallyinsulating layer has a thickness ranging from about 10 μm to about 30μm. In some embodiments, an electrically insulating layer has athickness less than about 1 μm or greater than about 50 μm.

In some embodiments, an optoelectronic device having a FIPELarchitecture described herein comprises a plurality of light emittingcomposite organic layers having one or more constructions. In someembodiments, one or more of the light emitting composite organic layershas a construction described in Section I herein. In some embodiments,the light emitting composite organic layers are separated from oneanother by one or more dielectric layers. Moreover, in some embodiments,the light emitting composite organic layers can be constructed withreference to one another or independently of one another. For example,in some embodiments, light emitting composite organic layers can haveoverlapping or partially overlapping emission profiles. In someembodiments, light emitting composite organic layers do not haveoverlapping emission profiles. In some embodiments, the emissionprofiles of the light emitting composite organic layers can be chosen toproduce a desired color emitted from the FIPEL.

In addition, an optoelectronic device having a FIPEL architecturedescribed herein, in some embodiments, has an operating voltage of 120VAC+/−10%. In some embodiments, a FIPEL has an operating voltage rangingfrom about 10 VAC to about 220 VAC. In some embodiments, a FIPEL has anoperating voltage ranging from about 20 VAC to about 440 VAC. In someembodiments, a FIPEL has an operating voltage ranging from about 5 VACto about 1000 VAC. In some embodiments, the operating voltage of a FIPELdescribed herein is selected with reference to the thickness of one ormore layers of the FIPEL, including the thickness of one or moredielectric layers present in the architecture.

Moreover, in some embodiments, the frequency of the electric fieldapplied to a FIPEL having a construction described herein ranges fromabout 10 Hz to about 1 GHz or from about 50 Hz to about 1 MHz. In someembodiments, the frequency of the applied electric field ranges fromabout 100 Hz to about 100 kHz or from about 500 Hz to about 50 kHz. Insome embodiments, the frequency of the applied electric field rangesfrom about 1 kHz to about 10 kHz. Further, in some embodiments, anoptoelectronic device described herein of a FIPEL architecture has aluminance demonstrating a non-linear response to changes in thefrequency of an alternating electric field applied by the first andsecond electrodes. For example, in some embodiments, a FIPEL has aluminance displaying a quadratic response to changes in the frequency ofthe applied alternating electric field.

II. Organic Light Emitting Diodes

In another aspect, optoelectronic devices described herein demonstratean OLED architecture. In some embodiments, an OLED comprises a firstelectrode, a second electrode and a light emitting composite organiclayer disposed between the first electrode and the second electrode, thelight emitting composite organic layer comprising a singlet emitterphase, a triplet emitter phase and a nanoparticle phase. In someembodiments, the singlet emitter phase, the triplet emitter phase and/ornanoparticle phase of an OLED can comprise any of the compositionalconstructions recited for the same in Section I(C) hereinabove and haveany of the properties described for the same recited in Section I(C)hereinabove. In some embodiments, for example, the singlet emitter phasecan comprise any conjugated polymeric species described in SectionI(C)(i)-(ii) hereinabove, the triplet emitter phase can comprise anytriplet species described in Section I(C)(i)-(ii) hereinabove, and thenanoparticle phase can comprise any nanoparticle species described inSection I(C)(i)-(ii) hereinabove.

In some embodiments, an OLED described herein comprises a plurality oflight emitting composite layers positioned between the first and secondelectrodes. For example, in some embodiments, a plurality of lightemitting layers, each having a construction described in Section(s)I(C)(i)-(ii) herein, are positioned between the first and secondelectrodes. The light emitting layers can have various emission profilesthat, when combined, provide the desired emission profilecharacteristics from the OLED.

In some embodiments, the first electrode and/or second electrode of anOLED is radiation transmissive. The first electrode and/or the secondelectrode, in some embodiments, can have any construction and/orproperties recited for a first and second electrode in Section I(A)-(B)hereinabove.

Moreover, in some embodiments, OLEDs described herein further compriseone or more hole transport, hole blocking, electron transport and/orelectron blocking layers. As described herein, in some embodiments,nanoparticles of the nanoparticle phase are associated withphosphorescent transition metal complexes of the triplet emitter phase.In some embodiments, for example, nanoparticles are bonded tophosphorescent transition metal complexes of the triplet emitter phase.

FIG. 4 illustrates a cross-sectional view of an optoelectronic devicehaving an OLED architecture according to one embodiment describedherein. As illustrated in FIG. 4, the OLED (40) comprises a radiationtransmissive first electrode (41) and a second electrode (42). A lightemitting composite organic layer (43) is disposed between the radiationtransmissive first electrode (41) and the second electrode (42).

III. Lighting Properties of Optoelectronic Devices

In some embodiments, an optoelectronic device having a FIPEL or OLEDarchitecture described herein has an efficiency of at least about 10lumens per watt (LPW). In some embodiments, a FIPEL and/or OLEDdescribed herein has an efficiency of at least about 50 LPW or at leastabout 100 LPW. A FIPEL and/or OLED described herein, in someembodiments, has an efficiency of at least about 150 LPW or 200 LPW. Insome embodiments, a FIPEL and/or OLED described herein has an efficiencyranging from about 10 LPW to about 200 LPW or from about 50 LPW to about100 LPW. In some embodiments, a FIPEL and/or OLED described herein hasan efficiency ranging from about 50 LPW to about 150 LPW or from about100 LPW to 150 LPW. In some embodiments, a FIPEL and/or OLED describedherein has an efficiency ranging from about 100 LPW to about 200 LPW orfrom about 150 LPW to about 200 LPW. Moreover, in some embodiments, anoptoelectronic device having a FIPEL or OLED architecture describedherein can have a lifetime enhanced by about 10 percent to about 1000percent.

Further, in some embodiments, a FIPEL and/or OLED described herein has aluminance of at least about 10 cd/m² or at least about 50 cd/m². In someembodiments, a FIPEL and/or OLED described herein has a luminance of atleast about 100 cd/m² or at least about 200 cd/m². In some embodiments,a FIPEL and/or OLED described herein has a luminance of at least about300 cd/m², at least about 500 cd/m², at least about 1000 cd/m² or atleast about 1500 cd/m². In some embodiments, a FIPEL and/or OLEDdescribed herein has a luminance ranging from about 200 cd/m² to about1000 cd/m², from about 500 cd/m² to about 1500 cd/m², from about 500cd/m² to about 10,000 cd/m², or from about 1000 cd/m² to about 40,000cd/m².

Moreover, FIPEL and/or OLED optoelectronic devices described herein, insome embodiments, can have any electroluminescent emission profile notinconsistent with the objectives of the present invention. In someembodiments, for instance, a device has an electroluminescent emissionhaving coordinates substantially in the white light region of the 1931CIE Chromaticity Diagram. In some embodiments, a FIPEL and/or OLED hasan electroluminescent emission having coordinates substantially in othercolor regions of the 1931 CIE Chromaticity Diagram, such as the redlight region, the blue light region, the green light region, the orangelight region, or the yellow light region.

Further, in some embodiments, a FIPEL and/or OLED optoelectronic devicedescribed herein comprising a singlet emitter phase and a tripletemitter phase demonstrates singlet and triplet emission in the emissionprofile. In some embodiments, the singlet emission and triplet emissionfrom a light emitting composite layer described herein is substantiallyequal or substantially balanced. In some embodiments, for example, alight emitting layer comprising a singlet emitter phase and a tripletemitter phase in any amount provided in Table III hereinabove,demonstrates singlet emission and triplet emission in the emissionprofile. In one embodiment, a light emitting composite layer comprisinga triplet emitter phase in an amount greater than or equal to about 10weight percent demonstrates singlet emission and triplet emission in theemission profile. As described further herein, in such embodiments, thesinglet and triplet emission can be substantially balanced.

IV. Methods of Making Optoelectronic Devices

In another aspect, methods of making optoelectronic devices aredescribed herein. In some embodiments, a method of making anoptoelectronic device comprises providing a first electrode, providing asecond electrode and disposing a composite light emitting layer betweenthe first electrode and the second electrode. As described furtherherein, the light emitting composite layer can demonstrate a variety ofconstructions. In some embodiments, for example, the light emittingcomposite layer can have any construction and/or properties recited fora light emitting composite layer in Section I(C)(i)-(ii) hereinabove.

In some embodiments, the first electrode and/or the second electrode isradiation transmissive. Additionally, in some embodiments, a methoddescribed herein further comprises disposing a dielectric layer betweenthe first electrode and the light emitting composite layer, or disposinga dielectric layer between the second electrode and the light emittingcomposite layer. In some embodiments, a first dielectric layer isdisposed between the light emitting composite layer and the firstelectrode, and a second dielectric layer is disposed between the secondelectrode and the light emitting composite layer. Dielectric layerssuitable for use in methods described herein, in some embodiments, canhave any construction and/or properties recited in Section I(D)hereinabove.

In some embodiments, a method of making an optoelectronic devicecomprises disposing a luminescent phase in a dielectric or electricallyinsulating host to provide a light emitting composite layer anddisposing the light emitting composite layer between a first electrodeand a second electrode. In some embodiments, the first electrode and/orthe second electrode is radiation transmissive. The luminescent phase,in some embodiments, comprises a conjugated polymer, a semiconductingpolymer, small molecules or nanoparticles or mixtures thereof.Additionally, in some embodiments, a dielectric layer or electricallyinsulating layer is positioned between the light emitting compositelayer and first and/or second electrode.

Some embodiments described herein are further illustrated in thefollowing non-limiting examples.

Example 1 Purified Single-Walled Carbon Nanotubes (SWNTs)

Purified SWNTs having a controlled length for use in an optoelectronicdevice described herein were prepared as follows.

Metal catalyst was removed from raw SWNTs as follows. A mixture ofHiPC®-SWNTs (High Pressure CO Conversion SWNTs, 100 mg, RiceUniversity), nitric acid (70 wt %, 200 mL), DI water (>18M ohm, 400 mL),and surfactant (Triton X-100, 0.05 mL) was refluxed at 100° C. for 6hours. The mixture was refluxed in a round-bottom flask equipped with areflux tower and a heating mantle (Glas-Col, 115 V 270 W, equipped withStaco Energy Products power supply, Model 3PN1010B). After refluxing, DIwater (400 mL) was added to the mixture, and the mixture was quicklyplaced in a refrigerator to cool the mixture below room temperature. Thecooled mixture was then filtered by vacuum filtration using a 47 mmdiameter, 0.2 μm pore size PTFE (polytetrafluoroethylene) membrane. Thefiltrand residue (hereinafter “A6-SWNT”) was rinsed with DI water (1000mL) and dried, while still on the filter, at 70° C. for 4 hours or more.The A6-SWNT was then removed from the filter and dried at 100° C. underN₂ for 1 hour.

The length of the tubes was controlled as follows. First, A6-SWNTs (5mg) and DI water (>18M ohm, 10 mL) were added to a flask and mixed for15 minutes. Nitric acid (70 wt %, 20 mL) and sulfuric acid (98 wt %, 60mL) were then added to the mixture. The mixture was then ultrasonicatedin a sonicator (Cole Parmer Model 08849-00) for 24 hours at 30-40° C. tocut the A6-SWNTs. To maintain the flask temperature duringultrasonication, the flask was cooled by a continuous flow of waterthrough the sonicator bath. The mixture of cut A6-SWNTs was thentransferred to a flat bottom flask equipped with a stirrer. To theflask, H₂O₂ (30 wt %, 12 mL) was added, and the mixture was stirred on astir plate for 20 minutes. The mixture was then filtered by vacuumfiltration using a 47 mm diameter, 0.2 μm pore size PTFE membrane. Thefiltrand residue was rinsed with DI water (1000 mL) and dried, whilestill on the filter, at 70° C. for 4 hours or more. The SWNT filtrandwas then removed from the filter and combined with DI water (1000 mL).This mixture was then ultrasonicated for 20 minutes and again filteredby vacuum filtration using a 47 mm diameter, 0.2 μm pore size PTFEmembrane. The SWNT filtrand was dried, while still on the filter, at 70°C. for 4 hours or more, then removed from the filter, and further driedat 100° C. under N₂ for 1 hour, producing purified SWNTs having a lengthreduced to less than about 200 nm.

Example 2 Optoelectronic Devices of a FIPEL Architecture

A series of optoelectronic devices having a FIPEL architecture accordingto some embodiments described herein was fabricated as follows.

First, an ITO-glass substrate was prepared for each device. TheITO-glass substrate consisted of a square substrate (25.4 mm×25.4 mm) of0.7 mm thick soda lime glass partially coated with a 150 nm thick layerof ITO (indium tin oxide). The ITO layer covered a 25.4 mm×15.9 mmportion of the glass substrate. The uncoated, “glass” portion of thesubstrate was polished to a surface roughness of <5 nm R_(a). Thecoated, “ITO” portion of the substrate was polished to a surfaceroughness of <3 nm R_(a). The ITO portion had a resistivity of less than10 ohm/sq. The ITO-glass substrate had a transparency greater than 95%at 555 nm.

Second, the ITO-glass substrate was cleaned as follows. A stream of highpurity (>99.99%) N₂ gas was blown onto the substrate from a tankequipped with a CGA 580 regulator. The substrate was then placed in apolypropylene substrate carrier. The substrate and substrate carrierwere placed in a glass dish. The glass dish was placed in anultrasonicator (Branson 3510). Acetone was then added to the glass dish,covering the substrate. Ultrasonic cleaning was then carried out for 15minutes or longer. The acetone solvent in the dish was then replacedwith methanol, and ultrasonic cleaning was carried out for an additionalperiod of 15 minutes or longer. The methanol solvent in the dish wasthen replaced with IPA (isopropylalcohol, High Performance LiquidChromatography (HPLC) grade), and ultrasonic cleaning was carried outfor an additional period of 15 minutes or longer. The substrate was thenremoved from the dish, and a stream of high purity (>99.99%) N₂ gas at apressure of 30 psi or more was used to dry the substrate. The driedsubstrate was then placed flat in a UV-ozone cleaner (UVOCS Inc., ModelT16X16/OES), with the functional side of the substrate facing upwards,and cleaned for 60 minutes or longer.

Third, a light emitting composite organic layer was coated onto eachcleaned ITO-glass substrate. The light emitting composite organic layerwas spin coated from a solution of polystyrene (PS) and polyfluorene(PFO) in chlorobenzene (8 mg/mL). PFO was obtained from American DyeSource of Quebec, Canada. To form a series of optoelectronic devices,the ratio of PS to PFO was varied. For each device, the ratio was 4:1,3:1, 2:1, 1:1, 1:2, 1:3 or 1:4. Prior to spin coating, each PS:PFOsolution was filtered through a 13 mm diameter, 0.2 μm pore size nylonsyringe filter. Spin coating was carried out using a spin coater (ChematTechnology KW-4A) operating at 2000 rpm for 60 seconds. Each coatedsubstrate was placed in a petri dish on a hot plate and cured at 90° C.for 60 minutes under dry N₂.

Fourth, a dielectric layer or electrically insulating layer was coatedonto the light emitting composite organic layer of each device. Thedielectric layer was spin coated from a solution of PVDF-TrFE indimethylformamide (DMF). For each device, the concentration of thePVDF-TrFE in DMF was 10%, 15% or 20% by weight. Spin coating was carriedout using a spin coater operating at 1500 rpm for 60 seconds forPVDF-TrFE concentrations of 10, 15, and 20%.

Fifth, a metal cathode layer was deposited on the dielectric layer. Thesubstrate was placed in a vacuum evaporator for deposition of Al(150-250 nm thick). Aluminum (>99.999%) was deposited at 0.4 to 0.7nm/sec at a pressure of 5×10⁻⁵ to 5×10⁻⁶ Torr.

Sixth, each device was sealed with a glass cap. The glass cap (0.7-1.1mm thick) was first cleaned with ultrasonic cleaning in acetone for 15minutes or more followed by ultrasonic cleaning in methanol for 15minutes or more. The glass cap was then pre-assembled by applying (1) adry chemical layer (CaO GDO, SAES Getters, 18 mm×10 mm×0.3-0.4 mm) tothe inside surface of the glass cap and (2) a curable sealing glue(Three Bond, 30Y-436) to the bottom edge of the glass cap. Thepre-assembled glass cap was then placed over the cathode on thesubstrate, and the sealing glue was cured by UV light (>6000 mJ/cm²emitted from an EFO UV light).

Table 4 shows the luminance of a series of optoelectronic devicesfabricated as described above with a PS:PFO ratio of 1:1 and differentamounts of PVDF-TrFE. The luminance was measured at turn-on voltages(V_(pp)) ranging from 0 to 8 V and frequencies ranging from 1 to 130kHz. Blue light emission was induced at low frequency, and blue-greenand green light emission was induced at high frequency.

TABLE 4 PVDF-TrFE Luminance (%) (cd/m²) 10 10 15 30 20 20

Table 5 shows the luminance and turn-on voltage for devices with adielectric layer formed from 15% PVDF-TrFE and different ratios ofPS:PFO in the composite organic layer.

TABLE 5 PS:PFO 1:1 2:1 3:1 4:1 1:2 1:3 1:4 Luminance (cd/m²) 30 20 17 1513 10 8 Turn-on Voltage (V_(pp)) 0.8 1.5 1.9 2 1.8 1.6 1.5

Example 3 Optoelectronic Devices of a FIPEL Architecture

A series of optoelectronic devices having a FIPEL architecture accordingto some embodiments described herein was fabricated as follows.

An ITO-glass substrate was prepared and cleaned for each device asdescribed in Example 2, Next, a light emitting composite organic layerwas coated onto the ITO-glass substrate. The light emitting compositeorganic layer was spray coated from a solution of PS and PFO (1:1) inchlorobenzene (8 mg/mL). The solution also contained purified SWNTs ofExample 1, providing a light emitting composite organic layer comprising0.01 weight percent SWNTs. The coated substrate was placed in a petridish on a hot plate and cured at 90° C. for 60 minutes under dry N₂.

Next, a dielectric layer was coated onto the light emitting organiclayer. The dielectric layer was spin coated from a solution of 15%PVDF-TrFE in DMF. To obtain a series of devices having differentdielectric layer thicknesses, spin coating was carried out using a spincoater operating at different speeds, ranging from 1000 rpm to 1500 rpm.An aluminum cathode layer was then deposited on the dielectric layer asdescribed in Example 2, followed by sealing of the device with a glasscap.

FIG. 5 illustrates the frequency-dependent luminance of a series ofoptoelectronic devices having different dielectric layer thicknesses.The dielectric layer of the device associated with curve 1 was spincoated at 1000 rpm. The dielectric layers of the devices associated withcurves 2, 3, 4, 5 and 6 were spin coated at 1100 rpm, 1200 rpm, 1300rpm, 1400 rpm and 1500 rpm, respectively.

Example 4 Optoelectronic Devices of a FIPEL Architecture

A series of optoelectronic devices having a FIPEL architecture accordingto some embodiments described herein was fabricated as follows.

An ITO-glass substrate was prepared and cleaned for each device asdescribed in Example 2. Then, a light emitting composite organic layerwas coated onto the ITO-glass substrate of each device as described inExample 3.

Next, a dielectric layer was coated onto the light emitting organiclayer. The dielectric layer was spin coated from a solution of 15%PVDF-TrFE in DMF. The solution also contained purified SWNTs of Example1, providing a dielectric layer comprising 0.01 weight percent purifiedSWNTs. To obtain a series of devices having different dielectric layerthicknesses, spin coating was carried out using a spin coater operatingat different speeds, ranging from 1000 rpm to 1500 rpm. An aluminumcathode layer was then deposited on the dielectric layer as described inExample 2, followed by sealing of the device with a glass cap.

FIG. 6 illustrates the frequency-dependent luminance of a series ofoptoelectronic devices having different dielectric layer thicknesses.The dielectric layer of the device associated with curve 7 was spincoated at 1000 rpm. The dielectric layers of the devices associated withcurves 8, 9, 10, 11 and 12 were spin coated at 1100 rpm, 1200 rpm, 1300rpm, 1400 rpm and 1500 rpm, respectively.

Example 5 Optoelectronic Device of a FIPEL Architecture

An optoelectronic device having a FIPEL architecture according to anembodiment described herein was fabricated as follows.

An ITO-glass substrate was prepared and cleaned for the device asdescribed in Example 2. Next, a dielectric layer was coated onto thecleaned ITO substrate. The dielectric layer was spin coated from asolution of 15% PVDF-TrFE in DMF at 1500 rpm for 60 seconds. A lightemitting composite organic layer was subsequently spin coated onto thedielectric layer at 1500 rpm for 60 seconds using a solution of PS andconjugated polymer [PF-BT-QL] described in PCT/US2011/043690 (1:1) inchlorobenzene (6 mg/mL). The solution also contained purified SWNTs ofExample 1 to provide 0.1 weight percent of the SWNTs in the depositedlight emitting composite organic layer. The resulting architecture wasplaced in a petri dish on a hot plate and cured at 90° C. for 60 minutesunder dry N₂. An aluminum cathode layer was then deposited on the lightemitting organic layer under conditions described in Example 2, followedby sealing of the FIPEL device with a glass cap.

FIG. 7 illustrates luminance of the resulting FIPEL device according tovaried operating voltages and electric field frequencies.

Example 6 Optoelectronic Device of a FIPEL Architecture

An optoelectronic device having a FIPEL architecture according to anembodiment described herein was fabricated as follows.

An ITO-glass substrate was prepared and cleaned for the device asdescribed in Example 2. Next, a dielectric layer was coated onto thecleaned ITO substrate. The dielectric layer was spin coated from asolution of 15% PVDF-TrFE in DMF at 1500 rpm for 60 seconds. Thesolution also contained purified SWNTs of Example 1 to provide 0.01weight percent of the SWNTs in the deposited dielectric layer.

A light emitting composite organic layer was subsequently spin coatedonto the dielectric layer at 1500 rpm for 60 seconds using a solution ofPS and conjugated polymer [PF-BT-QL] described in PCT/US2011/043690(1:1) in chlorobenzene (6 mg/mL). The solution also contained purifiedSWNTs of Example 1 to provide 0.1 weight percent of the SWNTs in thedeposited light emitting composite organic layer. The solution alsocontained Ir(ppy)₃ in an amount to provide 10 weight percent of theIr(ppy)₃ in the deposited light emitting composite organic layer. Theresulting architecture was placed in a petri dish on a hot plate andcured at 90° C. for 60 minutes under dry N₂. An aluminum cathode layerwas then deposited on the light emitting organic layer under conditionsdescribed in Example 2, followed by sealing of the FIPEL device with aglass cap.

FIG. 8 illustrates luminance of the resulting FIPEL device according tovaried operating voltages and electric field frequencies.

Example 7 Optoelectronic Device of a FIPEL Architecture

An optoelectronic device having a FIPEL architecture according to anembodiment described herein was fabricated as follows.

An ITO-glass substrate was prepared and cleaned as described in Example2. Next, a PEDOT buffer layer was coated onto the cleaned ITO-glasssubstrate. The buffer layer was spin coated from a solution of 6 parts(by volume) PEDOT/PSS(poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate), Baytron #8000)and 4 parts (by volume) deionized (DI) water (>18M ohm). For spincoating, the solution was filtered through a 13 mm diameter, 0.2 μm poresize nylon syringe filter. Spin coating was carried out using a spincoater (Chemat Technology KW-4A) operating at 4000 rpm for 15 seconds,for a target layer thickness of 40 nm. The coated substrate was placedin a petri dish on a hot plate (Corning) and cured at 200° C. for 5minutes in air. The petri dish and substrate were then placed in adesiccator with a dry N₂ atmosphere to cool to room temperature tocomplete the annealing process.

A PFO/SWNT emitting layer was coated onto the buffer layer by spincoating from a solution of purified SWNTs and PFO. The SWNTs werepurified in accordance with Example 1. The solution of purified SWNTsand PFO for spin coating was prepared as follows. In a dry N₂ atmosphereglove box, 1,2-dicholorbenzene (anhydrous, HPLC grade) solvent, PFO(0.015 wt %), and purified SWNTs (0.0015 wt %) were combined andultrasonicated for 60 minutes. Additional PFO was then added to themixture to increase the total amount of PFO to 1.5 wt %. To weigh thePFO, a balance specialized for use under varying pressures (MettlerToledo SAG204) was used. The mixture was then stirred in a vial equippedwith a magnetic stir bar at 50° C. for 30 minutes. The PFO/SWNT mixturewas then cooled to room temperature and filtered through a 0.45 μmteflon syringe filter for spin coating.

Spin coating was carried out in the glove box using a spin coater(Specialty Coating Systems, Inc., Model P6700) operating at 4000 rpm for15 seconds, for a target layer thickness of 80 nm. The coated substratewas placed in a petri dish on a hot plate and cured at 90° C. for 60minutes under dry N₂.

A metal cathode layer was subsequently deposited on the emitting layer.The substrate was placed in a vacuum evaporator for sequentialdeposition of LiF (up to 0.5 nm thick) and Al (150-250 nm thick).Lithium fluoride (>99.999%) was deposited at 0.02 nm/sec at a pressureof 5×10⁻⁵ to 5×10⁻⁶ Torr. Aluminum (>99.999%) was deposited at 0.4 to0.7 nm/sec at a pressure of 5×10⁻⁵ to 5×10⁻⁶ Torr.

The device was sealed with a glass cap. The glass cap (0.7-1.1 mm thick)was first cleaned with ultrasonic cleaning in acetone for 15 minutes ormore followed by ultrasonic cleaning in methanol for 15 minutes or more.The glass cap was then pre-assembled by applying (1) a dry chemicallayer (CaO GDO, SAES Getters, 18 mm×10 mm×0.3-0.4 mm) to the insidesurface of the glass cap and (2) a curable sealing glue (Three Bond,30Y-436) to the bottom edge of the glass cap. The pre-assembled glasscap was then placed over the cathode on the substrate, and the sealingglue was cured by UV light (>6000 mJ/cm² emitted from an EFO UV light).

Example 8 Optoelectronic Device of a FIPEL Architecture

An optoelectronic device having a FIPEL architecture according to anembodiment described herein was fabricated as follows.

An ITO-glass substrate was prepared and cleaned for the device asdescribed in Example 2. A light emitting composite organic layer wassubsequently spin coated onto the ITO-glass substrate using a solutionof conjugated polymer [PF-BT-QL] described in PCT/US2011/043690 inchlorobenzene (6 mg/mL) to provide a layer thickness of 100-200 nm. Thesolution also contained purified SWNTs of Example 1 to provide 0.07weight percent of the SWNTs in the deposited light emitting compositeorganic layer. The solution also contained Ir(ppy)₃ in an amount toprovide 10 weight percent of the Ir(ppy)₃ in the deposited lightemitting composite organic layer. The resulting architecture was placedin a petri dish on a hot plate and cured at 90° C. for 60 minutes underdry N₂.

Next, a dielectric layer was coated onto the light emitting organiclayer. The dielectric layer was spin coated from a solution of 15%PVDF-TrFE in DMF using a spin coater operating at 1500 rpm for 60seconds. An aluminum cathode layer was then deposited on the dielectriclayer as described in Example 2, followed by sealing of the device witha glass cap.

FIG. 9 illustrates electroluminescent properties of the optoelectronicdevice having the foregoing architecture. As illustrated in FIG. 9, theoptoelectronic device provides emission from the singlet conjugatedpolymer phase ([PF-BT-QL]) and the triplet phase Ir(ppy)₃. Emission fromthe singlet and triplet phases is substantially balanced. FIG. 9additionally provides the CIE coordinates, color rendering index (CRI)and correlated color temperature (CCT) of the optoelectronic device atvarious operating voltages.

Various embodiments of the invention have been described in fulfillmentof the various objects of the invention. It should be recognized thatthese embodiments are merely illustrative of the principles of thepresent invention. Numerous modifications and adaptations thereof willbe readily apparent to those skilled in the art without departing fromthe spirit and scope of the invention.

That which is claimed is:
 1. An optoelectronic device comprising: afirst electrode; a second electrode; a light emitting composite organiclayer disposed between the first electrode and the second electrode, thelight emitting composite organic layer comprising a singlet emitterphase, a triplet emitter phase, and a nanoparticle phase; and a firstdielectric layer disposed between the light emitting composite organiclayer and the first electrode or the second electrode, wherein thenanoparticle phase comprises one or more of nanotubes, carbonnanoparticles, metal nano articles semiconductor nanoparticles, andnanowhiskers.
 2. The optoelectronic device of claim 1, wherein thesinglet emitter phase comprises one or more conjugated polymers oroligomers, small molecules or mixtures thereof.
 3. The optoelectronicdevice of claim 2, wherein the one or more conjugated polymers oroligomers comprise a conjugated polymer or oligomer comprising at leasttwo repeat units selected from the group consisting of repeating unitsA, B and C:

wherein

represents points of attachment in the polymer chain or oligomer chain,X is selected from the group consisting of S, O, Se and NR₅ and R₁, R₂,R₅, R₆, R₇, R₈ and R₉ are independently selected from the groupconsisting of hydrogen, C₁₋₂₀ alkyl, C₂₋₂₀ alkenyl, C₈₋₁₂ alkyl andC₈₋₁₂ alkenyl and R₃ and R₄ are independently selected from the groupconsisting of aryl and heteroaryl, wherein the alkyl and alkenyl of R₁,R₂, R₅, R₆, R₇, R₈ and R₉ and the aryl and heteroaryl of R₃ and R₄ areoptionally independently substituted one or more times with asubstituent selected from the group consisting of -alkyl, -alkenyl,-aryl, -heteroaryl, -alkyl-aryl, -alkyl-heteroaryl, -alkenyl-aryl and-alkenyl-heteroaryl.
 4. The optoelectronic device of claim 3, wherein R₃and R₄ are independently selected from the group consisting of pyridyl,pyranyl, pyridinyl, bipyridinyl, phenylpyridinyl, thienyl, furanyl,selenophenyl, fluorenyl, carbazolyl, pyrrolyl, quinolinyl,isoquionolinyl, purinyl, oxazolyl and isoxazolyl and oligomers thereof.5. The optoelectronic device of claim 3, wherein the conjugated polymeror oligomer is of Formula (I):

wherein x and y are integers independently ranging from 1 to 10,000. 6.The optoelectronic device of claim 3, wherein the conjugated polymer oroligomer is of Formula (II):

wherein x and y are integers independently ranging from 1 to 10,000. 7.The optoelectronic device of claim 3, wherein the conjugated polymer oroligomer is of Formula (III):

wherein x and y are integers independently ranging from 1 to 10,000. 8.The optoelectronic device of claim 3, wherein the conjugated polymer oroligomer is of Formula (IV):

wherein x, y, and z are integers independently ranging from 1 to 10,000.9. The optoelectronic device of claim 2, wherein the one or moreconjugated polymers or oligomers comprises a structural unit of Formula(V):

wherein

represents points of attachment in the polymer or oligomer chain and R₁₆and R₁₇ are independently selected from the group consisting ofhydrogen, C₁₋₂₀ alkyl, C₂₋₂₀ alkenyl, C₈₋₁₂ alkyl and C₈₋₁₂ alkenyl andwherein the alkyl and alkenyl of R₁₆ and R₁₇ are optionallyindependently substituted one or more times with a substituent selectedfrom the group consisting of -alkyl, -alkenyl, -aryl, -heteroaryl,-alkyl-aryl, -alkyl-heteroaryl, -alkenyl-aryl and -alkenyl-heteroaryl.10. The optoelectronic device of claim 1, wherein the triplet emitterphase comprises a phosphorescent transition metal complex.
 11. Theoptoelectronic device of claim 10, wherein the triplet emitter phase isdispersed in the singlet emitter phase.
 12. The optoelectronic device ofclaim 1, wherein the light emitting composite organic layer comprises adielectric host for the singlet emitter phase and the triplet emitterphase.
 13. The optoelectronic device of claim 12, wherein the dielectrichost is polymeric. 14-16. (canceled)
 17. The optoelectronic device ofclaim 1, wherein the nanoparticle phase comprises carbon nanotubes,fullerenes, graphene or mixtures thereof.
 18. (canceled)
 19. (canceled)20. The optoelectronic device of claim 1, wherein the first electrode isradiation transmissive, and the second electrode is metal.
 21. Theoptoelectronic device of claim 20, wherein the first dielectric layer ispositioned between the second electrode and the light emitting compositeorganic layer.
 22. The optoelectronic device of claim 21 furthercomprising a second dielectric layer positioned between the radiationtransmissive first electrode and the light emitting composite organiclayer.
 23. The optoelectronic device of claim 1, wherein the emissionprofile of the device comprises emission from the singlet emitter phaseand emission from the triplet emitter phase.
 24. The optoelectronicdevice of claim 23, wherein the triplet emitter phase is present in thelight emitting composite organic layer in an amount of at least about 10percent by weight.
 25. The optoelectronic device of claim 23, whereinthe emission from the singlet emitter phase is substantially equal inintensity to emission from the triplet emitter phase.